Search results for "Raman spectra"
showing 10 items of 16 documents
Raman scattering and infrared reflectivity in [(InP)5(In0.49Ga0.51As)8]30 superlattices
2000
6 páginas, 6 figuras, 1 tabla.
Residual strain effects on the two-dimensional electron gas concentration of AlGaN/GaN heterostructures
2001
Ga-face AlGaN/GaN heterostructures with different sheet carrier concentrations have been studied by photoluminescence and Raman spectroscopy. Compared to bulk GaN, an energy shift of the excitonic emission lines towards higher energies was observed, indicating the presence of residual compressive strain in the GaN layer. This strain was confirmed by the shift of the E2 Raman line, from which biaxial compressive stresses ranging between 0.34 and 1.7 GPa were deduced. The spontaneous and piezoelectric polarizations for each layer of the heterostructures have been also calculated. The analysis of these quantities clarified the influence of the residual stress on the sheet electron concentratio…
Temperature dependence of the E2h phonon mode of wurtzite GaN/AlN quantum dots
2008
Raman scattering has been used to study the temperature dependence of the frequency and linewidth of the E2h phonon mode of GaN/AlN quantum dot stacks grown on 6H-SiC. The evolution of the nonpolar phonon mode was analyzed in the temperature range from 80 to 655 K for both quantum dots and barrier materials. The experimental results are interpreted by comparison with a model that takes into account symmetric phonon decay and the different thermal expansions of the constituents of the heterostructure. We find a small increase in the anharmonic parameters of the phonon modes in the heterostructure with respect to bulk. jorbumar@alumni.uv.es Alberto.Garcia@uv.es Ana.Cros@uv.es
Raman study of self-assembled InAs/InP quantum wire stacks with varying spacer thickness
2008
http://link.aip.org/link/?JAPIAU/104/033523/1
High-pressure synthesis of boron-rich chalcogenides B12S and B12Se
2022
The authors thank Drs. I. Dovgaliuk and T. Chauveau for assistance with Rietveld analysis; and Drs. V. Bushlya and A. Jamali for help with EDX/SEM measurements. This work was financially supported by the European Union's Horizon 2020 Research and Innovation Program under Flintstone2020 project (grant agreement No 689279).
Optical characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition
2000
Scanning electron microscopy, micro-Raman, and photoluminescence (PL) measurements are reported for Mg-doped GaN films grown on (0001) sapphire substrates by low-pressure metalorganic chemical vapor phase deposition. The surface morphology, structural, and optical properties of GaN samples with Mg concentrations ranging from 1019 to 1021 cm−3 have been studied. In the scanning micrographs large triangular pyramids are observed, probably due to stacking fault formation and three-dimensional growth. The density and size of these structures increase with the amount of magnesium incorporated in the samples. In the photoluminescence spectra, intense lines were found at 3.36 and 3.31 eV on the tr…
Growth and optical characterization of indirect-gap AlxGa1−xAs alloys
1999
Nonintentionally doped AlxGa1−xAs layers with 0.38 x 0.84 were grown on (100) GaAs substrates by liquid phase epitaxy (LPE) under near-equilibrium conditions. The crystalline quality of the samples was studied by photoluminescence at 2 K and room temperature Raman spectroscopy. The peculiar behavior in the photoluminescence intensities of the indirect bound exciton line and the donor–acceptor pair transition is explained from the evolution of the silicon donor binding energy according to the aluminum composition. It was also possible to observe the excitonic transition corresponding to the AlxGa1−xAs/GaAs interface, despite the disorder and other factors which are normally involved when gro…
Raman spectroscopy and photoluminescence of ZnTe thin films grown on GaAs
2002
5 páginas, 4 figuras, 1 tabla.
Computational and experimental investigation of intermolecular states and forces in the benzene-helium van der Waals complex
2003
A study of the intermolecular potential-energy surface (IPS) and the intermolecular states of the perprotonated and perdeuterated benzene–He complex is reported. From a fit to ab initio data computed within the coupled cluster singles and doubles including connected triples model for 280 interaction geometries, an analytic IPS including two- to four-body atom–atom terms is obtained. This IPS, and two other Lennard-Jones atom–atom surfaces from the literature, are each employed in dynamically exact (within the rigid-monomer approximation) calculations of J = 0 intermolecular states of the isotopomers. Rotational constants and Raman-scattering coefficients for intermolecular vibrational trans…
Raman spectroscopy and crystal-field split rotational states of photoproducts CO and H2 after dissociation of formaldehyde in solid argon
2012
Raman signal is monitored after 248 nm photodissociation of formaldehyde in solid Ar at temperatures of 9–30 K. Rotational transitions J = 2 ← 0 for para-H2 fragments and J = 3 ← 1 for ortho-H2 are observed as sharp peaks at 347.2 cm−1 and 578.3 cm−1, respectively, which both are accompanied by a broader shoulder band that shows a split structure. The rovibrational spectrum of CO fragments has transitions at 2136.5 cm−1, 2138.3 cm−1, 2139.9 cm−1, and 2149 cm−1. To explain the observations, we performed adiabatic rotational potential calculations to simulate the Raman spectrum. The simulations indicate that the splitting of rotational transitions is a site effect, where H2 molecules can resi…